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Direct growth of GaN on off-oriented SiC (0001) by molecular-beam epitaxy for GaN/SiC heterojunction bipolar transistor

✍ Scribed by Y. Nakano; J. Suda; T. Kimoto

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 143 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461549

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