Direct evidence of self-aligned Si nanocrystals formed by ion irradiation of Si/SiO2 interfaces

✍ Scribed by Lars Röntzsch; Karl-Heinz Heinig; Bernd Schmidt; Arndt Mücklich; Wolfhard Möller; Jürgen Thomas; Thomas Gemming

• Book ID: 105363461
• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 203 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521399

✦ Synopsis

Abstract

Energy‐filtered transmission electron microscopy proves directly that ion irradiation and post‐irradiation annealing of a Si/SiO~2~ interface results in the formation of a narrow layer of monodisperse Si nanocrystals in the oxide at a tunnel distance from the interface. Position and size of the Si nanocrystals are in agreement with predictive atomistic computer simulations. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)