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Experimental evidence of Si nanocluster δ-layer formation in the vicinity of ion-irradiated SiO2–Si interfaces

✍ Scribed by Lars Röntzsch; Karl-Heinz Heinig; Bernd Schmidt; Arndt Mücklich


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
183 KB
Volume
242
Category
Article
ISSN
0168-583X

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A procedure for the determination of the interface layer thickness between the bulk Ðlm and the Si substrate SiO 2 from single-wavelength null ellipsometric data is described. The e †ect of the angular errors in the angle of incidence is eliminated because it is found along with the Ðlm and interfac