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Diffusion profiles of boron implanted into plasma-etched silicon surfaces

โœ Scribed by Shenai, K.

Book ID
114534607
Publisher
IEEE
Year
1992
Tongue
English
Weight
421 KB
Volume
39
Category
Article
ISSN
0018-9383

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Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3 ร‚ 10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly in the pre-amorphized layers. For instance, the a