Diffusion of ion-implanted boron impurit
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Naotsugu Ohno; Tohru Hara; Yasuhiko Matsunaga; Michael I Current; Morio Inoue
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Article
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2000
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Elsevier Science
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English
β 246 KB
Boron ion implantation into pre-amorphized silicon is studied. Pre-amorphization is performed either by F + or Si + implantation prior to B + implantation at 10 keV with 3 Γ 10 15 ions/cm 2 . Broadening of the boron profile can be suppressed markedly in the pre-amorphized layers. For instance, the a