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Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

✍ Scribed by Feliciano Giustino; Paolo Umari; Alfredo Pasquarello


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
205 KB
Volume
72
Category
Article
ISSN
0167-9317

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Single Hf atoms inside the ultrathin SiO
✍ S.N. Rashkeev; K. van Benthem; S.T. Pantelides; S.J. Pennycook πŸ“‚ Article πŸ“… 2005 πŸ› Elsevier Science 🌐 English βš– 363 KB

We show that individual Hf atoms may get incorporated into the SiO 2 interlayer which is formed between the HfO 2 dielectric film and the Si substrate during rapid thermal annealing. We report atomically-resolved Z-contrast images of a Si/SiO 2 /HfO 2 structure together with first-principles calcula