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Diagnostic of silicon piezoresistive pressure sensors by low frequency noise measurements

✍ Scribed by Milan M. Jevtić; Miloljub A. Smiljanić


Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
605 KB
Volume
144
Category
Article
ISSN
0924-4247

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Low frequency noise measurements and the characterization of bipolar transistors were used for the evaluation of siliconon-insulator (SOI) films obtained by zone-melting recrystallization (ZMR) and epitaxial Si layers grown on them with regard to bipolar complementary metal-oxide-semiconductor (BICM