Low frequency noise investigations for evaluation of silicon-on-insulator films obtained by zone-melting recrystallization
✍ Scribed by B. Tillack; R. Banisch; F. Januschewski; H.H. Richter; K. Höppner; A. Chovet
- Publisher
- Elsevier Science
- Year
- 1993
- Tongue
- English
- Weight
- 482 KB
- Volume
- 18
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
Low frequency noise measurements and the characterization of bipolar transistors were used for the evaluation of siliconon-insulator (SOI) films obtained by zone-melting recrystallization (ZMR) and epitaxial Si layers grown on them with regard to bipolar complementary metal-oxide-semiconductor (BICMOS) application. In particular, noise investigations had been found to be a promising method for characterizing SO1 material and the interface properties.
Electrical measurements were completed by crystallographic investigation using cross-section transmission electron microscopy.
The investigated noise characterization, the estimated generation-recombination properties and the crystallographic characterization demonstrate the good quality of the SO1 as well as of the epitaxial layer and they indicate that the thick SO1 films generated by ZMR are suitable for BICMOS technology.