Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

✍ Scribed by H.D. Xiong; D. Heh; M. Gurfinkel; Q. Li; Y. Shapira; C. Richter; G. Bersuker; R. Choi; J.S. Suehle

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 470 KB
• Volume: 84
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2007.04.094