Evaluation of the N- and La-induced defects in the high-κ gate stack using low frequency noise characterization

✍ Scribed by C.D. Young; D. Veksler; S. Rumyantsev; J. Huang; H. Park; W. Taylor; M. Shur; G. Bersuker

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 518 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.109