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Device simulation for decananometer MOSFETs

โœ Scribed by Enrico Sangiorgi; Pierpaolo Palestri; David Esseni; Claudio Fiegna; Antonio Abramo; Luca Selmi

Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
286 KB
Volume
6
Category
Article
ISSN
1369-8001

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โœฆ Synopsis

This paper discusses the main issues related to the application of numerical device simulation to advanced decananometer-size MOSFETs. The main trends of CMOS technology evolution are analyzed and discussed with emphasis on the requirements imposed to device simulation programs suitable for application to the development of new, advanced technology generations. The main approaches for the simulation of carrier transport in silicon devices are briefly reviewed and their advantages and limitations are discussed. Finally, two examples of application of advanced physics-based device simulation to the analysis of the operation of state-of-the-art technologies are reported.

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