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A MOSFET structure for a negative resistance device

โœ Scribed by C.Guru Prasad; K. Ramkumar; M. Satyam


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
104 KB
Volume
32
Category
Article
ISSN
0038-1101

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Three-dimensional simulation for negativ
โœ Chiping Ju; Armen H. Zemanian ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 743 KB

The behaviours of parasitic bipolar transistors are investigated by exploring the physical mechanisms of negative resistance characteristics generated in a small-sized MOSFET structure. Physical experiments and three-dimensional simulations verify the expected negative resistance characteristics. Th