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Device modeling of ferroelectric memory field-effect transistor (FeMFET)

✍ Scribed by Hang-Ting Lue; Chien-Jang Wu; Tseung-Yuen Tseng

Book ID
114616853
Publisher
IEEE
Year
2002
Tongue
English
Weight
360 KB
Volume
49
Category
Article
ISSN
0018-9383

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## Abstract The non‐volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configu