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Ferroelectric Field Effect Transistors for Memory Applications

✍ Scribed by Jason Hoffman; Xiao Pan; James W. Reiner; Fred J. Walker; J. P. Han; Charles H. Ahn; T. P. Ma

Publisher
John Wiley and Sons
Year
2010
Tongue
English
Weight
364 KB
Volume
22
Category
Article
ISSN
0935-9648

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✦ Synopsis

Abstract

The non‐volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configuration. Coupling the ferroelectric polarization directly to the channel of a field effect transistor is a long‐standing research topic that has been difficult to realize due to the properties of the ferroelectric and the nature of the interface between the ferroelectric and the conducting channel. Here, we report on the fabrication and characterization of two promising capacitor‐less memory architectures.

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