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Oligothiophene-Based Networks Applied for Field-Effect Transistors

✍ Scribed by B.-H. Huisman; J.J.P. Valeton; W. Nijssen; J. Lub; W. ten Hoeve

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 120 KB
Volume: 15
Category: Article
ISSN: 0935-9648
DOI: 10.1002/adma.200305245

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## Abstract The non‐volatile polarization of a ferroelectric is a promising candidate for digital memory applications. Ferroelectric capacitors have been successfully integrated with silicon electronics, where the polarization state is read out by a device based on a field effect transistor configu