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Nonvolatile memory devices based on organic field-effect transistors

✍ Scribed by Hong Wang; YingQuan Peng; ZhuoYu Ji; Ming Liu; LiWei Shang; XingHua Liu

Book ID
107372379
Publisher
Springer
Year
2011
Tongue
English
Weight
923 KB
Volume
56
Category
Article
ISSN
1001-6538

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## Abstract A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low‐cost memory technology. In this Review Article we discuss the latest developments i