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Organic Nonvolatile Memory Devices Based on Ferroelectricity

✍ Scribed by Ronald C. G. Naber; Kamal Asadi; Paul W. M. Blom; Dago M. de Leeuw; Bert de Boer

Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
520 KB
Volume
22
Category
Article
ISSN
0935-9648

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✦ Synopsis

Abstract

A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low‐cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field‐effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.

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