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Device characteristics of AlGaAs/InGaAs HEMTs fabricated by inductively coupled plasma etching

✍ Scribed by Jin-Hee Lee; Hyung-Sup Yoon; Jae Yeob Shim; Hae-Chun Kim

Book ID: 108388658
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 432 KB
Volume: 435
Category: Article
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(03)00405-x

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