Development of millimeter-wave GaN HFET technology

✍ Scribed by Higashiwaki, M. ;Mimura, T. ;Matsui, T.

• Book ID: 105364255
• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 683 KB
• Volume: 204
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200674860

✦ Synopsis

Abstract

This paper describes approaches that we have used to improve the high‐frequency device characteristics of GaN‐based heterostructure field‐effect transistors (HFETs). We developed three novel techniques to suppress short‐channel effects: high‐Al‐composition and thin barrier layers, SiN passivation by catalytic chemical vapor deposition, and sub‐100‐nm Ti‐based gates. These techniques were used to enhance the high‐frequency device characteristics of Al~0.4~Ga~0.6~N/GaN HFETs, which had a record current‐gain cutoff frequency of 181 GHz. In addition, high‐performance depletion‐ and enhancement‐mode AlN/GaN HFETs, which had DC and RF device characteristics fully comparable with those of state‐of‐the‐art AlGaN/GaN HFETs, were also fabricated with these techniques. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)