## Abstract This paper describes approaches that we have used to improve the highโfrequency device characteristics of GaNโbased heterostructure fieldโeffect transistors (HFETs). We developed three novel techniques to suppress shortโchannel effects: highโAlโcomposition and thin barrier layers, SiN p
GaN Technology for Millimeter Wave Power Amplifiers
โ Scribed by Oki, A. K.; Wojtowicz, M.; Heying, B.; Smorchkova, I.; Luo, B.; Siddiqui, M.
- Book ID
- 121458859
- Publisher
- The Electrochemical Society
- Year
- 2013
- Tongue
- English
- Weight
- 239 KB
- Volume
- 50
- Category
- Article
- ISSN
- 1938-6737
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