Influence of Pinhole-Type Defects in AlG
β
Kim, Jong-Wook ;Lee, Jae-Seung ;Shin, Jin-Ho ;Lee, Jae-Hoon ;Hahm, Sung-Ho ;Lee,
π
Article
π
2001
π
John Wiley and Sons
π
English
β 252 KB
π 1 views
Growth pressure-dependent generation of trap states in AlGaN/GaN heterostructures was analysed. AlGaN/GaN heterostructures were grown on sapphire substrates at two different pressures of AlGaN layer growth, 150 and 200 Torr, with other growth parameters unchanged. The measured Al mole fraction in Al