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Analysis of millimeter-wave GaN IMPATT oscillator at elevated temperature

✍ Scribed by C. C. Meng; G. R. Liao; J. W. Chen

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 100 KB
Volume: 23
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(19991120)23:4<257::aid-mop20>3.0.co;2-9

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✦ Synopsis

w Ž .x structed time delay Fig. 4 b obtained by means of the Hilbert transform from the measured reflectivity. Similar results are obtained for all of the rest of the sample grating resonances.

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Performance of millimeter-wave GaInP IMP

Performance of millimeter-wave GaInP IMPATT device at elevated temperature

✍ C. C. Meng; G. R. Liao 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 107 KB 👁 1 views

GaInP material has high breakdown electric fields, and thus is suitable for a¨alanche transit-time de¨ice application. Millimeter-( ) wa¨e GaInP IMPATT de¨ices at operating temperature 500 K are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT de¨ice has a