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Performance of millimeter-wave GaInP IMPATT device at elevated temperature

✍ Scribed by C. C. Meng; G. R. Liao

Publisher: John Wiley and Sons
Year: 1999
Tongue: English
Weight: 107 KB
Volume: 20
Category: Article
ISSN: 0895-2477
DOI: 10.1002/(sici)1098-2760(19990320)20:6<422::aid-mop16>3.0.co;2-0

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✦ Synopsis

GaInP material has high breakdown electric fields, and thus is suitable for a¨alanche transit-time de¨ice application. Millimeter-( ) wa¨e GaInP IMPATT de¨ices at operating temperature 500 K are analyzed by a large-signal model in this letter. The simulation confirms that a GaInP IMPATT de¨ice has a power density ad¨antage when compared to con¨entional GaAs and Si IMPATT de¨ices. The impro¨ement in power density is about factor of 4 at 100 GHz. Moreo¨er, GaInP IMPATT de¨ices are easy to incorporate into GaAs millimeter-wa¨e monolithic integrated circuit technology because of the lattice match and high etching selecti¨ity between GaInP and GaAs materials.

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