Because of the complexity of the global equivalent circuit, the dual-gate transistor is modeled as two single-gate devices in cascode configuration. A good agreement between the measured and simulated performance is obtained, and its validity is proved as it was used for the design of an MMIC mixer
โฆ LIBER โฆ
Accurate small-signal modeling of HFET's for millimeter-wave applications
โ Scribed by Rorsman, N.; Garcia, M.; Karlsson, C.; Zirath, H.
- Book ID
- 114552618
- Publisher
- IEEE
- Year
- 1996
- Tongue
- English
- Weight
- 534 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0018-9480
No coin nor oath required. For personal study only.
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