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An accurate dual-gate HFET nonlinear model for millimeter-wave MMIC design

✍ Scribed by Rachid Allam; Christophe Kolanowski; Jean-Claude De Jaeger; Yves Crosnier


Publisher
John Wiley and Sons
Year
1998
Tongue
English
Weight
142 KB
Volume
8
Category
Article
ISSN
1096-4290

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✦ Synopsis


Because of the complexity of the global equivalent circuit, the dual-gate transistor is modeled as two single-gate devices in cascode configuration. A good agreement between the measured and simulated performance is obtained, and its validity is proved as it was used for the design of an MMIC mixer at V-band.