## Abstract An accurate analytical model for the transconductance‐to‐current ratio (__g~m~__/__I~ds~__), current–voltage characteristics, and drain conductance is developed for a vertical surrounding‐gate (VSG) MOSFET based on the solution of the 2‐D Poisson's equation. The dependence of __g~m~__/_
An Accurate Small Signal Modeling of Cylindrical/Surrounded Gate MOSFET for High Frequency Applications
✍ Scribed by Ghosh, Pujarini; Haldar, Subhasis; Gupta, R.S.; Gupta, Mridula
- Book ID
- 119964526
- Publisher
- The Institute of Electronics Engineers of Korea
- Year
- 2012
- Tongue
- English
- Weight
- 951 KB
- Volume
- 12
- Category
- Article
- ISSN
- 1598-1657
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