An accurate scaling approach for small-signal modeling of high-power HBT devices

✍ Scribed by Sami Bousnina

• Publisher: John Wiley and Sons
• Year: 2007
• Tongue: English
• Weight: 391 KB
• Volume: 49
• Category: Article
• ISSN: 0895-2477
• DOI: 10.1002/mop.22765

✦ Synopsis

Abstract

This paper presents an accurate scaling approach for small‐signal modeling of high‐power multi‐cell heterojunction bipolar transistors (HBTs). This approach is mainly based on the characterization of an elementary‐cell device and a proper modeling of the metalwork structure surrounding the transistor intrinsic part. The determined elementary‐cell small‐signal model is then scaled up to generate the S‐parameters of the multi‐cell device. An experimental validation was performed on a single‐cell and three‐cells GaAsHBT devices and excellent agreement was obtained between measured and simulated S‐parameters over frequency range 1–15 GHz. This modeling approach is particularly useful for on‐wafer characterization and modeling of high power HBT devices. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 49: 2429–2434, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.22765