✦ LIBER ✦

Development of interference lithography for 22 nm node and below

✍ Scribed by Yasuyuki Fukushima; Yuya Yamaguchi; Takafumi Iguchi; Takuro Urayama; Tetsuo Harada; Takeo Watanabe; Hiroo Kinoshita

Book ID: 104052941
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 825 KB
Volume: 88
Category: Article
ISSN: 0167-9317
DOI: 10.1016/j.mee.2011.02.076

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✦ Synopsis

An extreme ultraviolet (EUV) interference lithographic exposure tool was installed at the long undulator beamline in NewSUBARU to evaluate EUV resists for 25 nm node and below. The two-window transmission grating of 40 and 50 nm half pitch (hp) were fabricated with techniques of spattering, electron beam lithography, dry etching and wet etching. hp patterns (20 and 25 nm) of chemically amplified resist (CAR) and non-CAR were successfully replicated using the EUV interference lithographic exposure tool.

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Development of interference lithography for 22&#xa0;nm node and below

✦ Synopsis

Development of interference lithography for 22 nm node and below