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Determination of the conduction-band offset of a single AlGaAs barrier layer using DLTS

✍ Scribed by Q.S. Zhu; S.M. Mou; X.C. Zhou; Z.T. Zhong


Book ID
103919047
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
240 KB
Volume
12
Category
Article
ISSN
0749-6036

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Coupled ultrathin InAs layers in GaAs as
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We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix. The conduction band offset E c could be separated from the