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Coupled ultrathin InAs layers in GaAs as a tool for the determination of band offsets

✍ Scribed by J. Brübach; A.Yu. Silov; J.E.M. Haverkort; W. van der Vleuten; J.H. Wolter

Book ID
102615444
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
157 KB
Volume
21
Category
Article
ISSN
0749-6036

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✦ Synopsis

We have determined the band offsets at the highly strained InAs/GaAs heterointerface by photoluminescence excitation (PLE) measurements of the symmetric and antisymmetric states in two coupled ultrathin InAs layers embedded in a GaAs matrix. The conduction band offset E c could be separated from the valence band offsets, since in a 32 monolayer (ML) barrier sample, the splitting between the heavy-hole exciton transitions is solely determined by E c . Knowing E c , the heavy-hole (hh) and light-hole (lh) band offsets E hh and E lh could subsequently be determined from the coupling-induced shift and splitting in samples with a 16, 8 and 4 ML barrier. We find a conduction band offset of 535 meV, a conduction band offset ratio of Q c = 0.58 and a strain induced splitting between the hh and lh subbands of 160 meV.

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