Determination of recombination lifetime in MOS structures by a sine voltage-sweep technique

✍ Scribed by P. Peykov; T. Diaz; M. Aceves

• Publisher: Elsevier Science
• Year: 2002
• Tongue: English
• Weight: 100 KB
• Volume: 5
• Category: Article
• ISSN: 1369-8001
• DOI: 10.1016/s1369-8001(02)00068-9

✦ Synopsis

A sine-voltage technique for measurements of recombination lifetime in metal oxide semiconductor (MOS) structures is proposed. When a fast sine-voltage sweep ramp is applied to the gate of an MOS capacitor a non-equilibrium depletion layer is formed and electron-hole generation starts in the space-charge-region and in the bulk. If the measurements are performed at elevated temperature so that quasi-neutral region generation rather than space charge region generation dominates, then the diffusion length, consequently the recombination lifetime, can be determined.