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A simple technique of work function difference determination in mos structures

✍ Scribed by Przewlocki, H. M. ;Krawczyk, S. ;Jakubowski, A.

Publisher
John Wiley and Sons
Year
1981
Tongue
English
Weight
277 KB
Volume
65
Category
Article
ISSN
0031-8965

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A sine-voltage technique for measurements of recombination lifetime in metal oxide semiconductor (MOS) structures is proposed. When a fast sine-voltage sweep ramp is applied to the gate of an MOS capacitor a non-equilibrium depletion layer is formed and electron-hole generation starts in the space-c