Radiative Recombination Dynamics of Carr
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Kudo, H. ;Tanabe, T. ;Ishibashi, H. ;Zheng, R. ;Yamada, Y. ;Taguchi, T.
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Article
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2000
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John Wiley and Sons
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English
โ 91 KB
๐ 2 views
The radiative recombination process of In x Ga 1ยฑx N epitaxial layers was investigated by means of the temperature dependence of time-resolved photoluminescence spectra. Two emission components separated by about 40 meV were clearly observed. At 6 K, the higher-and lower-energy components had decay-