Spectroscopic ellipsometry has been used to determine the optical constants-complex dielectric constant (e\* = e 1 + e 2 ), refractive index (n), extinction coefficient (k), absorption coefficient (a) and normal incidence reflectivity (R)-of two-source vacuum-evaporated polycrystalline Cd 1 Γx Zn x
β¦ LIBER β¦
Determination of optical constants of pentacene thin film by spectroscopic ellipsometry
β Scribed by Debjit Datta; Satyendra Kumar
- Book ID
- 108265578
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 336 KB
- Volume
- 94
- Category
- Article
- ISSN
- 0927-0248
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## Abstract Silicon oxynitride (SiO~x~ N~y~) thin films were deposited on silicon substrates by ionβassisted deposition. Variable angle spectroscopic ellipsometry (VASE) was used to optically characterize the deposited film properties, such as layer thickness and composition, film surface and inter