Determination of interfacial stress during thermal oxidation of silicon
โ Scribed by Murray, Paul; Carey, G. F.
- Book ID
- 120063155
- Publisher
- American Institute of Physics
- Year
- 1989
- Tongue
- English
- Weight
- 732 KB
- Volume
- 65
- Category
- Article
- ISSN
- 0021-8979
- DOI
- 10.1063/1.342592
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๐ SIMILAR VOLUMES
## Influence of Mechanical Stress on Thermal Oxidation Phenomena of Silicon Some phenomena of the thermal wet oxidation of polycrystalline silicon structures are discussed in connection with the geometry of this structures and mechanical stress present in the growing oxide layer. A model is presen
The oxidation kinetics of Ge + -implanted Si(1 0 0) were determined over a temperature range of 900-1100 ยฐC in both dry and wet O 2 conditions. It will be shown that the implanted Ge substantially enhances the kinetics (compared to that in virgin Si) under certain conditions. Segregation of the Ge d