Determination of conductivity type from capacitance measurements on MOS diodes
β Scribed by Clark, L.E.
- Book ID
- 114588858
- Publisher
- IEEE
- Year
- 1965
- Tongue
- English
- Weight
- 186 KB
- Volume
- 12
- Category
- Article
- ISSN
- 0018-9383
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π SIMILAR VOLUMES
C-V characteristics of metal-insulator-semiconductor (MIS) structures based on 6H-SiC are investigated. These characteristics are influenced by non-equilibrium charge carrier conditions at the insulator-semiconductor interface. Depending on the sweep rate of the bias voltage the traps exhibit either
It is well known that capacitance-voltage (C2V) measurements provide a simple determination of oxide thickness, but with the scaling down of components the classical method is not appropriated any more. We have observed that for two devices with the same oxide thickness and different surfaces, the c