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Design study of high energy, high current rf accelerators for ion implantation

✍ Scribed by R.W. Thomae; H. Deitinghoff; J. Häuser; H. Klein; P. Leipe; A. Schempp; T. Weis; J. Bannenberg; W. Urbanus; R. Wojke; P.W. Van Amersfoort

Book ID
113279645
Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
418 KB
Volume
37-38
Category
Article
ISSN
0168-583X

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Design study of high energy, high curren
Design study of high energy, high current, R.F. accelerators for ion implantation
✍ R.W. Thomae; H. Deitinghoff; J. Häuser; H. Klein; P. Leipe; A. Schempp; T. Weis; 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 392 KB

Ion implantation is of great importance in semiconductor device fabrication. Owing to the increasing interest of" the microelectronic industry in the implantation of ions in the megaelectronvolt energy range, high energy beams are required. Furthermore, for several applications the implanted dose is