## Abstract A fully integrated ultrawideband (UWB) bipolar cascode with metal oxide semiconductor field effect transistor (BiFET) mixer using standard commercial 0.35‐μm silicon germanium bipolar complementary metal oxide semiconductor technology was first proposed and fabricated in this study. Thi
Design and Properties of Phototransistor Photodetector in Standard 0.35-m SiGe BiCMOS Technology
✍ Scribed by Kuang-Sheng Lai; Ji-Chen Huang; Hsu, K.Y.-J.
- Book ID
- 114619140
- Publisher
- IEEE
- Year
- 2008
- Tongue
- English
- Weight
- 405 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0018-9383
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