𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Depth resolution in SIMS study of boron δ-doping in epitaxial silicon

✍ Scribed by J.C. Dupuy; G. Prudon; C. Dubois; P. Warren; D. Dutartre


Book ID
113285849
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
427 KB
Volume
85
Category
Article
ISSN
0168-583X

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


SIMS Depth Profiling of Delta-doped Laye
✍ Smirnov, V. K.; Simakin, S. G.; Potapov, E. V.; Makarov, V. V. 📂 Article 📅 1996 🏛 John Wiley and Sons 🌐 English ⚖ 723 KB

Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s

Effectiveness and Limits of the Deconvol
✍ Gautier, B.; Dupuy, J. C.; Prost, R.; Prudon, G. 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 533 KB

In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proÐles of boron-doped layers in silicon. The real SIMS proÐles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq

GaAs delta-doped layers in Si for evalua
✍ D. W. Moon; J. Y. Won; K. J. Kim; H. J. Kim; H. J. Kang; M. Petravic 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 153 KB 👁 1 views

Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro