Boron and germanium 6-doped silicon samples were studied using SIMS depth profiling on a Cameca IMS-4F instrument with O,', N z + and Cs' primary beams at various energies and incidence angles. The depth resolution characteristics were compared. We show that, with experimental conditions being the s
Depth resolution in SIMS study of boron δ-doping in epitaxial silicon
✍ Scribed by J.C. Dupuy; G. Prudon; C. Dubois; P. Warren; D. Dutartre
- Book ID
- 113285849
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 427 KB
- Volume
- 85
- Category
- Article
- ISSN
- 0168-583X
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📜 SIMILAR VOLUMES
In this paper, an iterative algorithm is used in order to deconvolve some real and simulated SIMS proÐles of boron-doped layers in silicon. The real SIMS proÐles are obtained by the analysis of delta layers of boron-doped silicon in a silicon matrix, analysed in a Cameca IMS3/4f instrument at obliq
Due to the complicated artefacts in SIMS depth profiling, SIMS depth resolution is difficult to evaluate. For evaluation of the SIMS depth resolution, delta-doped layers are more useful than sharp interfaces, because the matrix effect and the sputtering rate change can be minimized in profiling thro