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Deposition of osmium and ruthenium thin films from organometallic cluster precursors

✍ Scribed by Chunxiang Li; Weng Kee Leong; Kian Ping Loh


Publisher
John Wiley and Sons
Year
2009
Tongue
English
Weight
214 KB
Volume
23
Category
Article
ISSN
0268-2605

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Yttrium oxide thin film deposition by atomic layer epitaxy (ALE) was studied at 200Β±425 C using Y(thd) 3 , Y(thd) 3 (bipyridyl), or Y(thd) 3 (1,10-phenanthroline) (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) as an yttrium precursor, and ozone as an oxygen source. All yttrium precursors were analyzed