## Abstract Ruthenium thin films are deposited by atomic layer deposition (ALD) from bis(__N__,__N__'βdiβ__tert__βbutylacetamidinato)ruthenium(II) dicarbonyl and O~2~. Highly conductive, dense, and pure thin films can be deposited when oxygen exposure, __E__~O~, approaches a certain threshold (__E_
β¦ LIBER β¦
Deposition of osmium and ruthenium thin films from organometallic cluster precursors
β Scribed by Chunxiang Li; Weng Kee Leong; Kian Ping Loh
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 214 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0268-2605
- DOI
- 10.1002/aoc.1494
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