✦ LIBER ✦

Deposition of high crystallinity poly-Si films on glass substrate and fabrication of high mobility bottom-gate TFT

✍ Scribed by J.W. Lee; K. Shimizu; J. Hanna

Book ID: 116667692
Publisher: Elsevier Science
Year: 2004
Tongue: English
Weight: 351 KB
Volume: 338-340
Category: Article
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2004.02.047

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Deposition of device grade poly-Si films

Deposition of device grade poly-Si films on glass substrate directly at 450 °C and fabrication of bottom-gate poly-Si TFTs

✍ C. Lim; J.W. Lee; J. Hanna 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 589 KB

High mobility top-gate thin film transis

High mobility top-gate thin film transistors fabricated with poly-Si1−xGex thin films on glass substrate

✍ J.J. Zhang; K. Shimizu; J. Hanna 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 322 KB

Fabrication of poly-Si TFT with silicide

Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate

✍ Shiyang Zhu; J. Singh; Chunxiang Zhu; A. Du; M.F. Li 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 301 KB

Study of CVD high-k gate oxides on high-

Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

✍ S. Van Elshocht; M. Caymax; T. Conard; S. De Gendt; I. Hoflijk; M. Houssa; F. Le 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 214 KB

Precursor Cat-CVD a-Si films for the for

Precursor Cat-CVD a-Si films for the formation of high-quality poly-Si films on glass substrates by flash lamp annealing

✍ Keisuke Ohdaira; Kazuhiro Shiba; Hiroyuki Takemoto; Tomoko Fujiwara; Yohei Endo; 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 555 KB

Fabrication and properties of high-Tc fi

Fabrication and properties of high-Tc films deposited on LaGaO3 and LaAlO3 substrates

✍ R. Sobolewski; P. Gier{owski; W. Kula; G. Jung; S. Zarembiński; M. Berkowski; A. 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 136 KB

We report on our progress in the fabrication and characterization of high-To thin films prepared on the in-house grown single crystal LaGaO3 and LaAIO3 substrates. Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O films were deposited using a chemical-spray technique and a dc-magnetron-sputtering process, followed by an