Deposition of aluminum nitride thin film on Si(1 1 1) by KrF excimer laser and its characterizations
β Scribed by Ming Chang Shih; Chi Wei Liang; Ping Ju Chaing
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 545 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
ZnO thin films with highly c-axis orientation have been fabricated on p-type Si(1 1 1) substrates at 400 8C by pulsed laser deposition (PLD) from a metallic Zn target with oxygen pressures between 0.1 and 0.7 mbar. Experimental results indicate that the films deposited at 0.3 and 0.5 mbar have bette
Aluminum nitride (AlN) thin films have been deposited on Si(1 1 1) substrates by using reactive-rf-magnetron-sputtering at 250 Β°C. The crystalline quality and orientation of the films have been studied by X-ray diffraction (XRD). We have observed that the films grow with c-or a-axis orientation. The