Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer

✍ Scribed by Choi, J.; Han, S.M.; Shah, S.I.; Choi, S.G.; Woo, D.H.; Lee, S.; Kim, S.H.; Lee, J.I.; Kang, K.N.; Cho, J.

• Book ID: 117866189
• Publisher: IEEE
• Year: 1998
• Tongue: English
• Weight: 87 KB
• Volume: 4
• Category: Article
• ISSN: 1077-260X
• DOI: 10.1109/2944.720472