✦ LIBER ✦

Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide

✍ Scribed by Fu, L.; Wong-Leung, J.; Deenapanray, P. N. K.; Tan, H. H.; Jagadish, C.; Gong, Bin; Lamb, R. N.; Cohen, R. M.; Reichert, W.; Dao, L. V.; Gal, M.

Book ID: 121353379
Publisher: American Institute of Physics
Year: 2002
Tongue: English
Weight: 305 KB
Volume: 92
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.1503857

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Erbium-induced interdiffusion of gallium

Erbium-induced interdiffusion of gallium and aluminum in GaAs/AlGaAs quantum-well structures

✍ O. B. Gusev; B. Ya. Ber; M. S. Bresler; B. P. Zakharchenya; I. N. Yassievich; G. 📂 Article 📅 1999 🏛 SP MAIK Nauka/Interperiodica 🌐 English ⚖ 101 KB

Dependence of dielectric-cap quantum-wel

Dependence of dielectric-cap quantum-well disordering of GaAs-AlGaAs quantum-well structure on the hydrogen content in SiNx capping layer

✍ Choi, J.; Han, S.M.; Shah, S.I.; Choi, S.G.; Woo, D.H.; Lee, S.; Kim, S.H.; Lee, 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 87 KB