Dielectric cap disordering of GaAs/AIGaAs multiple quantum well by using plasma enhanced chemical vapour deposited SiN capping layer

✍ Scribed by W. J. Choi; S. Lee; Y. Kim; S. K. Kim; J. I. Lee; K. N. Kang; N. Park; H. L. Park; K. Cho

• Book ID: 104780682
• Publisher: Springer
• Year: 1995
• Tongue: English
• Weight: 264 KB
• Volume: 14
• Category: Article
• ISSN: 0261-8028
• DOI: 10.1007/bf00462206