Enhanced disordering of GaAs/AIGaAs multiple quantum well by rapid thermal annealing using plasma enhanced chemical vapour deposited SiN capping layer grown at high RF power condition

✍ Scribed by W. J. Choi; J. I. Lee; I. K. Han; K. N. Kang; Y. Kim; H. L. Park; K. Cho

• Book ID: 104768948
• Publisher: Springer
• Year: 1994
• Tongue: English
• Weight: 273 KB
• Volume: 13
• Category: Article
• ISSN: 0261-8028
• DOI: 10.1007/bf00420787