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Dielectric cap quantum well disordering for band gap tuning of InGaAs/InGaAsP quantum well structure using various combinations of semiconductor-dielectric capping layers

✍ Scribed by H. T. Yi; J. Cho; W. J. Choi; D. H. Woo; S. H. Kim; K. N. Kang

No coin nor oath required. For personal study only.

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