GaInAs/InP quantum wires grown by metalo
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M. Geiger; F. Adler; U.A. Griesinger; H. Schweizer; F. Scholz
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Article
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1997
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Elsevier Science
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English
โ 414 KB
A single nominally lattice matched GalnAs quantum well (QW)/quantum wire (QWR) structure was grown by metalorganic vapor phase epitaxy (MOVPE) in Vgrooved lnP substrates. Different SiO2 etch masks with opening widths from 2/tin down to 200 nm (for application as second order DFB grating) were define