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Deformation of and Stress in Epitaxial Silicon Films on Single-Crystal Sapphire

✍ Scribed by Dumin, D. J.


Book ID
121820228
Publisher
American Institute of Physics
Year
1965
Tongue
English
Weight
494 KB
Volume
36
Category
Article
ISSN
0021-8979

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Superconducting Y-Ba-Cu-O thin films are deposited on silicon (100) substrates where an intermediate buffer layer of yttria stablized zirconia [YSZ] i~ used to prevent mterdiffusion and interfacial reactions. Both layers are grown epitaxially by the pulsed laser deposition technique. The. films are