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Defects in p-type Cz-silicon irradiated at elevated temperatures

✍ Scribed by Naveengoud Ganagona; Bahman Raeissi; Lasse Vines; Edouard V. Monakhov; Bengt G. Svensson

Book ID
115561639
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
233 KB
Volume
9
Category
Article
ISSN
1862-6351

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## Abstract The effects of vacancies introduced by neutron‐irradiation on oxygen precipitation at elevated temperatures in Czochralski (CZ) silicon have been investigated. In comparison with noirradiated CZ silicon, the neutron‐irradiated CZ silicon exhibits stronger oxygen precipitation at 1050 Β°C